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K4N51163QC-ZC36 - 512Mbit gDDR2 SDRAM

K4N51163QC-ZC36_1259091.PDF Datasheet
 Full text search : 512Mbit gDDR2 SDRAM

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K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 512Mbit gDDR2 SDRAM
 SAMSUNG[Samsung semiconductor]
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J5232 512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM
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Samsung Semiconductor Co., Ltd.
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K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 512Mbit SDRAM
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SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
HYB25D512800AT-6 HYB25D512160AT-6 HYB25D512160AT H 512Mbit Double Data Rate SDRAM
 INFINEON[Infineon Technologies AG]
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF 512-Mbit DDR2 SDRAM
512Mbit Double Data Rate (DDR2) Component
 Infineon Technologies A...
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
 Numonyx B.V
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
 HYNIX[Hynix Semiconductor]
HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
 Hynix Semiconductor
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W982516BH-75 W982516BH-75I W982516BH-75L Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
 Winbond Electronics
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
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 Elpida Memory
 
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